DocumentCode
1013892
Title
Design of 2 µm-period minor loops in hybrid bubble memory devices
Author
Ohashi, M. ; Miyashita, T. ; Satoh, Y. ; Betsui, K. ; Komenou, K.
Author_Institution
Fujitsu Laboratories, Atsugi, Japan
Volume
21
Issue
5
fYear
1985
fDate
9/1/1985 12:00:00 AM
Firstpage
1709
Lastpage
1711
Abstract
The folded minor loops for hybrid bubble memory devices with 2 μm period propagation tracks have been developed by designing junctions between permalloy and implanted tracks, as well as designing inside and outside turns. The junction from the permalloy to the implanted tracks has been successfully designed utilizing the deep potential well of the permalloy pattern for bubbles to cross the boundary. The junctions were operated successfully for the first time using 0.6 μm bubbles optimized for 2 μm period tracks. We also designed the outside and inside turns considering the demagnetizing field and the crystalline axis of the implanted layer respectively. As a result, good bias margins of turns were obtained. The bias field levels of all elements agreed quite satisfactorily. Overall bias field margins of 40 Oe has been obtained with the quasi-static drive field of 70 Oe.
Keywords
Magnetic bubble device fabrication; Magnetic bubble memories; Permalloy memories; Anisotropic magnetoresistance; Degradation; Hybrid junctions; Magnetic fields; Tracking loops;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1985.1064124
Filename
1064124
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