• DocumentCode
    10139
  • Title

    Spectrally Resolved Dynamics of Synthesized CdSe/ZnS Quantum Dot/Silica Nanocrystals for Photonic Down-Shifting Applications

  • Author

    Sadeghimakki, Bahareh ; Jahed, Navid M. S. ; Sivoththaman, Siva

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
  • Volume
    13
  • Issue
    4
  • fYear
    2014
  • fDate
    Jul-14
  • Firstpage
    825
  • Lastpage
    834
  • Abstract
    Photonic structures capable of luminescence down-shifting (LDS) have strong application potential in several areas of optoelectronics. Such structures can be formed by overcoating quantum dots (QDs) with integrable, transparent layers. In this paper, silica was grown on CdSe/ZnS QDs to form QD/silica nanocrystals (NCs) in a microemulsion synthesis process. The synthesized structures were structurally and optically characterized to understand the growth mechanism, luminescence properties, and the influence of process parameters on excitonic decay and lifetime. Process conditions were established to have single QDs at the centers of the silica particles. The effects of temperature, excitation duration, size of QDs, and type of ligands on decay dynamics were established. Temperature- and time-resolved excitonic decay study of QD/silica NCs suggested carrier-trapping at the QD/silica interface and the exciton-phonon coupling to be the two main nonradiative processes limiting the luminescence efficiency. The synthesized NCs displayed intense photoluminescence (PL) with slight decrease in lifetime. The PL efficiency of the NCs improved for longer illumination. The NC structures that safely embed QDs in transparent medium are good candidates for LDS applications in photovoltaic, imaging, and detection devices.
  • Keywords
    II-VI semiconductors; cadmium compounds; microemulsions; nanofabrication; nanostructured materials; photoluminescence; semiconductor growth; semiconductor quantum dots; silicon compounds; wide band gap semiconductors; zinc compounds; CdSe-ZnS-SiO2; LDS applications; NC structures; PL efficiency; QD-silica NC; QD-silica interface; carrier-trapping; detection devices; exciton-phonon coupling; imaging devices; luminescence down-shifting; luminescence efficiency; luminescence properties; microemulsion synthesis process; nonradiative processes; optoelectronics; overcoating quantum dots; photoluminescence; photonic down-shifting applications; photonic structures; photovoltaic devices; quantum dot-silica nanocrystals; silica particles; spectral resolved dynamics; temperature-resolved excitonic decay; time-resolved excitonic decay; Absorption; Films; Fluorescence; Nanocrystals; Photonics; Silicon compounds; CdSe/ZnS quantum dot (QD); QD/silica nanocrystals (NCs); excitonic decay; ligand exchange; luminescence down-shifting (LDS); photoluminescence (PL); synthesis;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2014.2324973
  • Filename
    6817600