• DocumentCode
    1013936
  • Title

    New silicon carbide device techniques

  • Author

    Bowe, J.J. ; Frost, J.A.

  • Author_Institution
    Air Force Cambridge Research Center, Bedford, Mass.
  • Volume
    6
  • Issue
    2
  • fYear
    1959
  • fDate
    4/1/1959 12:00:00 AM
  • Firstpage
    248
  • Lastpage
    249
  • Keywords
    Aluminum; Capacitors; Circuits; Conducting materials; Dielectrics; Diodes; Fabrication; Frequency conversion; Germanium alloys; P-n junctions; Rectifiers; Semiconductivity; Semiconductor materials; Silicon carbide; Surface resistance; Switches; Temperature; Tensile stress; Varactors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1959.14512
  • Filename
    1472555
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1013936