Title :
A normal amorphous silicon-based separate absorption and multiplication avalanche photodiode (SAMAPD) with very high optical gain
Author :
Lee, K.H. ; Fang, Y.K. ; Lee, G.Y.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
11/1/1995 12:00:00 AM
Abstract :
A normal amorphous silicon-based separate absorption and multiplication avalanche photodiode (SAMAPD) with very high optical gain of the avalanche photodiode has been developed successfully by plasma-enhanced chemical vapor deposition (PECVD). Based on experimental results, using undoped α-Si:H as avalanche layer material and α-Si1-xGex:H as absorption layer material, the hole-injection (HI) type SAMAPD yields a very high optical gain of 686 at a reverse bias of 16 V under an incident light power of Pin =1 μW and has a rise time of 145 μs at a load resistance R=10 kΩ. Thus the amorphous silicon-based SAMAPD is a good candidate for the long-range optical communication applications
Keywords :
Ge-Si alloys; amorphous semiconductors; avalanche photodiodes; elemental semiconductors; optical communication equipment; plasma CVD; silicon; 1 muW; 10 kohm; 145 mus; 16 V; PECVD; SAMAPD; Si-SiGe; absorption layer material; avalanche layer material; hole-injection type diode; incident light power; load resistance; long-range optical communication applications; optical gain; plasma-enhanced chemical vapor deposition; reverse bias; rise time; separate absorption and multiplication avalanche photodiode; Absorption; Amorphous materials; Avalanche photodiodes; Chemical vapor deposition; Costs; Electron optics; Glass; Optical materials; Optical sensors; Plasma chemistry;
Journal_Title :
Electron Devices, IEEE Transactions on
