Title :
Hot-carrier-induced deep-level defects from gated-diode measurements on MOSFETs
Author :
Speckbacher, P. ; Asenov, A. ; Bollu, M. ; Koch, F. ; Weber, W.
Author_Institution :
Dept. of Phys., Tech. Univ. Munchen, Garching, West Germany
Abstract :
The reverse-bias current in the gated-diode configuration of hot-carrier degraded MOS devices was measured. It is shown that interface defects created by the degradation contribute predominantly to the generation current. The spatial distribution of the deep-level defects was obtained by means of device simulation.<>
Keywords :
deep levels; hot carriers; insulated gate field effect transistors; semiconductor device models; MOSFETs; deep-level defects; device simulation; gated-diode measurements; generation current; hot-carrier degraded MOS devices; interface defects; reverse-bias current; Charge carrier processes; Current measurement; Degradation; FETs; Hot carriers; Interface states; MOS devices; MOSFETs; Monitoring; Voltage;
Journal_Title :
Electron Device Letters, IEEE
