Title :
50-nm T-Gate InAlAs/InGaAs Metamorphic HEMTs With Low Noise and High fT Characteristics
Author :
Lim, Byeong Ok ; Lee, Mun Kyo ; Baek, Tae Jong ; Han, Min ; Kim, Sung Chan ; Rhee, Jin-Koo
Author_Institution :
Dongguk Univ., Seoul
fDate :
7/1/2007 12:00:00 AM
Abstract :
We report 50-nm T-gate metamorphic high-electron mobility transistors (MHEMTs) with low noise figure and high characteristics. The 30 mumtimes2 MHEMT shows a drain current density of 690 mA/mm, a gm,max of 1270 mS/mm, an fT of 489 GHz, and an of 422 GHz. In the frequency range of 59-61 GHz, the noise figure is less than 0.7 dB, and the associated gain was greater than 9 dB at a drain voltage of 1.3 V and a gate voltage of -0.8 V. To our knowledge, the MHEMT shows the best performance in terms of and noise figure among GaAs-based HEMTs.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor device noise; InAlAs-InGaAs; T-gate metamorphic HEMT; current gain cutoff frequency; drain current density; frequency 422 GHz; frequency 489 GHz; frequency 59 GHz to 61 GHz; high electron mobility transistor; size 30 mum; size 50 nm; voltage 1.3 V; Current density; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Noise figure; Performance gain; Voltage; mHEMTs; 50 nm; Current gain cutoff frequency; low noise; metamorphic high-electron mobility transistor (MHEMT); millimeter-wave frequency;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.899442
