Three-dimensional modeling of multichip module interconnects

Author

Lam, Cheung-Wei ; Ali, S.M. ; Nuytkens, Peter

Author_Institution

Dept. of Electr. Eng., MIT, Cambridge, MA, USA

Volume

16

Issue

7

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

699

Lastpage

704

Abstract

The finite-difference time-domain method with nonuniform grid is applied to the analysis of novel three-dimensional (3D) multichip module (MCM) interconnects. The vertical interconnects involved in this technology consist of small plated via holes defined by a photolithography system. The via dimensions are of the same order as the microstrip and stripline linewidths to reduce the transmission line discontinuities. Two 3D transitions are investigated: 1) microstrip-via-stripline and 2) microstrip-via-90° stripline. Electric field distributions and pulse propagation under the microstrip and the stripline are presented. The scattering parameters for various cases are calculated and compared. Geometrical effects such as different conductor extensions on top of the vias and different hole sizes in the reference plane are also investigated. It is found that the 90° bend structure shows less reflection than the straight one. Designers may introduce such 90° bends intentionally to improve signal transmission

Keywords

S-parameters; finite difference time-domain analysis; microstrip lines; multichip modules; photolithography; 3D interconnects; conductor extensions; electric field distributions; finite-difference time-domain method; hole sizes; microstrip-via-90° stripline; microstrip-via-stripline; multichip module interconnects; nonuniform grid; photolithography system; plated via holes; pulse propagation; scattering parameters; vertical interconnects; Conductors; Finite difference methods; Lithography; Microstrip; Multichip modules; Reflection; Scattering parameters; Stripline; Time domain analysis; Transmission line discontinuities;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/33.257864

Filename

257864