• DocumentCode
    1014491
  • Title

    Nonvolatile Multilevel Conductance and Memory Effect in Molecule-Based Devices

  • Author

    Guo, Peng ; Dong, Yuan-Wei ; Ji, Xin ; Lu, Yin-Xiang ; Xu, Wei

  • Author_Institution
    Fudan Univ., Shanghai
  • Volume
    28
  • Issue
    7
  • fYear
    2007
  • fDate
    7/1/2007 12:00:00 AM
  • Firstpage
    572
  • Lastpage
    574
  • Abstract
    Electrical characteristics of a single-layer organic device using 2-(hexahydropyrimidin-2-ylidene)-malononitrile (HPYM) that is interposed between Al/Al2O3 (cathode) and Ag (anode) electrodes were investigated. The application of different positive voltages produced different high-conductance currents, resulting in the multilevel memory capability of the device. The high-conductance states could be erased back to the low-conductance state by the application of a negative bias. The formation of an aluminum oxide layer between Al and HPYM layer could be one effective method to increase the data-retention time but could be irrelevant with the electric-field-induced conductance-state transition of the device.
  • Keywords
    aluminium compounds; molecular electronics; semiconductor storage; silver; 2-(hexahydropyrimidin-2-ylidene)-malononitrile; Ag; Al-Al2O3; electrical bistability; memory effect; molecule-based devices; nonvolatile multilevel conductance; organic thin film; single-layer organic device; Anodes; Cathodes; Electrodes; Materials science and technology; Nonvolatile memory; Optical materials; Organic materials; Polymer films; Semiconductor materials; Voltage; Electrical bistability; memory effect; multilevel conductance; organic thin film;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2007.900085
  • Filename
    4252197