DocumentCode
1014553
Title
The effect of secondary and backscattered electrons in the parallel-plane diode
Author
Harris, L.A.
Author_Institution
General Electric Res. Lab., Schenectady, N. Y.
Volume
6
Issue
4
fYear
1959
Firstpage
413
Lastpage
418
Abstract
Separate calculations are carried out to determine the influence of true, low-energy secondary electrons and of higher-energy backscattered electrons released from the anode of the parallel-plane, space-charge limited diode. Both groups depress the potential, increase the field near the anode, and decrease the net diode current by small but appreciable amounts.
Keywords
Anodes; Apertures; Cathodes; Diodes; Electrodes; Electron devices; Electron emission; Electron tubes; Helium; Physics; Production; Space charge;
fLanguage
English
Journal_Title
Electron Devices, IRE Transactions on
Publisher
ieee
ISSN
0096-2430
Type
jour
DOI
10.1109/T-ED.1959.14573
Filename
1472616
Link To Document