Prediction of storage time in junction transistors

This paper points out that in the prediction of storage time one needs to know only a single fundamental device parameter, the storage time constant Ts. Several methods of measuring Ts, are considered and compared both theoretically and experimentally. A single nonoscilloscope method of measuring Tsis discussed and its theory presented. This method holds out the best promise for the ability to predict the storage time of very fast transistors. It is therefore now possible to predict large signal transient response of transistors on the basis of small signal nonoscilloscope measurements.