Title :
On-Resistance Degradations for Different Stress Conditions in High-Voltage pLEDMOS Transistor With Thick Gate Oxide
Author :
Sun, Weifeng ; Wu, Hong ; Shi, Longxing ; Yi, Yangbo ; Li, Haisong
Author_Institution :
Southeast Univ., Nanjing
fDate :
7/1/2007 12:00:00 AM
Abstract :
The different on-resistance degradations of the p-type lateral extended drain MOS (pLEDMOS) transistor with thick gate oxide for different hot carrier stress conditions have been experimentally investigated for the first time. The difference results from the interface trap generation and the hot electron injection and trapping into the thick gate oxide and field oxide of the pLEDMOS transistor, which has been analyzed in detail using the MEDICI simulator.
Keywords :
electric resistance; electron traps; hot carriers; hot electron transistors; power MOSFET; semiconductor device models; MEDICI simulator; high-voltage pLEDMOS transistor; hot carrier stress condition; hot electron injection; hot electron trapping; interface trap generation; on-resistance degradations; p-type lateral extended drain MOS transistor; thick gate oxide; Application specific integrated circuits; Degradation; Driver circuits; Electron traps; Hot carriers; MOSFETs; Medical simulation; Secondary generated hot electron injection; Stress measurement; Voltage; Hot electron injection and trapping; on-resistance degradation; p-type lateral extended drain MOS (pLEDMOS); thick gate oxide;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.898489
