Dynamic SPICE-simulation of the electrothermal behavior of SOI MOSFET´s

Author

Bielefeld, Juergen ; Pelz, Georg ; Abel, Hans Bernd ; Zimmer, Günter

Author_Institution

Dept. of Electron. Devices & Circuits, Univ. Gesamthochschule Duisburg, Germany

Volume

42

Issue

11

fYear

1995

fDate

11/1/1995 12:00:00 AM

Firstpage

1968

Lastpage

1974

Abstract

A nonlinear dynamic electrothermal model of the SOI MOSFET is implemented and used in SPICE3. This model is formulated as a set of algebraic and (partial) differential equations which is converted into a SPICE3 netlist automatically by a model translator. Neither is the simulator rewritten nor are SPICE device models implemented or changed. In this way, the presented approach supports effective model development. To show the electrothermal interaction, the SOI MOSFET model is applied to several static and dynamic simulations. The SPICE-simulation results of the thermal model are verified with the commercial finite-element simulator ANSYS

Keywords

MOSFET; SPICE; digital simulation; partial differential equations; semiconductor device models; silicon-on-insulator; ANSYS; SOI MOSFET; SPICE3; dynamic SPICE-simulation; finite-element simulator; model translator; nonlinear dynamic electrothermal model; partial differential equations; thermal model; Circuit simulation; Coupling circuits; Differential equations; Electrothermal effects; Electrothermal launching; MOSFET circuits; SPICE; Temperature; Thermal resistance; Vehicle dynamics;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.469405

Filename

469405