Comparative study of fully depleted and body-grounded non fully depleted SOI MOSFETs for high performance analog and mixed signal circuits

Author

Chan, Mansun ; Yu, Bin ; Ma, Zhi-Jian ; Nguyen, Cuong T. ; Hu, Chenming ; Ko, Ping K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

42

Issue

11

fYear

1995

fDate

11/1/1995 12:00:00 AM

Firstpage

1975

Lastpage

1981

Abstract

This paper compared the performance of conventional fully depleted (FD) SOI MOSFETs and body-grounded nonfully depleted (NFD) SOI MOSFETs for analog applications, A new low-barrier body-contact (LBBC) technology has been developed to provide effective body contact. Experimental results show that the NFD MOSFET´s with LBBC structure give one order of magnitude higher output resistance, significantly lower flicker noise, improved subthreshold characteristics, and minimal threshold voltage variation compared with conventional FD SOI MOSFETs. The device characteristics of the LBBC MOSFET´s are more desirable for fabricating high performance analog or mixed analog/digital CMOS circuits

Keywords

CMOS analogue integrated circuits; MOSFET; SIMOX; flicker noise; mixed analogue-digital integrated circuits; semiconductor device noise; I-V characteristics; SIMOX wafers; analog CMOS circuits; body-grounded nonfully depleted SOI MOSFET; flicker noise; fully depleted SOI MOSFET; low-barrier body-contact technology; mixed analog/digital CMOS circuits; nMOSFET; output resistance; pMOSFET; subthreshold characteristics; threshold voltage variation; 1f noise; CMOS analog integrated circuits; CMOS digital integrated circuits; Contacts; Immune system; MOSFETs; Semiconductor films; Silicon; Substrates; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.469406

Filename

469406