DocumentCode
1014926
Title
A p-n-p high-frequency silicon transistor produced by double diffusion and Oxide masking techniques
Author
Little, W.A.
Author_Institution
Texas Instruments, Inc., Dallas, Texas
Volume
7
Issue
2
fYear
1960
fDate
4/1/1960 12:00:00 AM
Firstpage
108
Lastpage
108
Keywords
Cutoff frequency; Diodes; Electrical resistance measurement; Etching; Gallium arsenide; Geometry; Germanium; Gold; Pollution measurement; Semiconductor diodes; Silicon; Solid state circuits; Switches;
fLanguage
English
Journal_Title
Electron Devices, IRE Transactions on
Publisher
ieee
ISSN
0096-2430
Type
jour
DOI
10.1109/T-ED.1960.14613
Filename
1472720
Link To Document