Title :
A low gate bias model extraction technique for AlGaN/GaN HEMTs
Author :
Chen, Guang ; Kumar, Vipan ; Schwindt, Randal S. ; Adesida, Ilesanmi
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ. at Urbana-Champaign, Urbana, IL, USA
fDate :
7/1/2006 12:00:00 AM
Abstract :
The small-signal equivalent circuit of AlGaN/GaN high electron-mobility transistors is discussed. A new modeling procedure is introduced in this paper that does not bias the device at a untenable high gate voltage in order to extract the parasitic inductance and resistance. Simulated results show good agreement with measurements up to 40 GHz.
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; circuit simulation; high electron-mobility transistors; low gate bias; model extraction; parasitic inductance extraction; small-signal equivalent circuit; small-signal modeling; Aluminum gallium nitride; Contact resistance; Equivalent circuits; Frequency; Gallium nitride; HEMTs; Inductance; MODFETs; Parasitic capacitance; Voltage; Gallium–nitride (GaN) high electron-mobility transistor (HEMT); small-signal modeling;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2006.877047
