DocumentCode
1015063
Title
Speed and efficiency in multiple p-i-n photodetectors
Author
Sadra, K. ; Srinivasan, A. ; Neikirk, D.P. ; Streetman, B.G.
Author_Institution
Dept. of Electr. Eng., Texas Univ., Austin, TX, USA
Volume
11
Issue
12
fYear
1993
fDate
12/1/1993 12:00:00 AM
Firstpage
2052
Lastpage
2056
Abstract
We present a theoretical evaluation of the application of multiple intrinsic layers to enhancing the quantum efficiency of high-speed p-i-n photodetectors. It is shown that the use of multiple layers may lead to substantial improvements in the efficiency of detectors operating in the 20-100-GHz range, provided that the device area is reduced to limit the intrinsic capacitance and special care is taken to avoid large parasitic effects. Potential fabrication schemes are discussed
Keywords
capacitance; optical communication equipment; optical films; p-i-n photodiodes; photodetectors; 20 to 100 GHz; device area; fabrication schemes; high-speed; intrinsic capacitance; multiple intrinsic layers; multiple p-i-n photodetectors; parasitic effects; quantum efficiency; Absorption; Detectors; Equations; Frequency; Mirrors; PIN photodiodes; Parasitic capacitance; Photodetectors; Quantum capacitance; Quantum mechanics;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.257969
Filename
257969
Link To Document