DocumentCode :
1015317
Title :
120-nm bandwidth erbium-doped fiber amplifier in parallel configuration
Author :
Yeh, Chien-Hung ; Lee, Chien-Chung ; Chi, Sien
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
16
Issue :
7
fYear :
2004
fDate :
7/1/2004 12:00:00 AM
Firstpage :
1637
Lastpage :
1639
Abstract :
A new S- to L-band erbium-doped fiber amplifier (EDFA) module, which reaches 120-nm gain bandwidth of 1480 to 1600 nm, has been experimentally investigated and demonstrated by using coupled structure. A 32.8-, 34.7-, and 38.1-dB peak gain is obtained at 1504, 1532, and 1568 nm, respectively, when the input signal power is -30 dBm. In addition, this proposed amplifier also provides a broad-band amplified spontaneous emission (ASE) light source of 1480-1606 nm with the output level above -40 dBm.
Keywords :
erbium; optical communication equipment; optical fibre amplifiers; optical fibre couplers; spontaneous emission; wavelength division multiplexing; 1480 to 1606 nm; 1504 nm; 1532 nm; 1568 nm; 32.8 dB; 34.7 dB; 38.1 dB; broad-band amplified spontaneous emission light source; coupled structure; erbium-doped fiber amplifier; wavelength-division-multiplexing; Bandwidth; Broadband amplifiers; Erbium-doped fiber amplifier; Filters; Laser excitation; Light sources; Spontaneous emission; Stimulated emission; Wavelength division multiplexing; Wideband;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2004.828357
Filename :
1308249
Link To Document :
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