• DocumentCode
    1015344
  • Title

    Tenth-micron polysilicon thin-film transistors

  • Author

    Watts, R.K. ; Lee, J.T.C.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    14
  • Issue
    11
  • fYear
    1993
  • Firstpage
    515
  • Lastpage
    517
  • Abstract
    Small thin-film polysilicon transistors are of interest for load devices in static random-access memory (SRAM) cells of the near future. We present measured characteristics of thin-film transistors (TFT´s) with gate lengths ranging from 7 to 0.12 mu m made in large-grain polysilicon.<>
  • Keywords
    SRAM chips; elemental semiconductors; insulated gate field effect transistors; semiconductor technology; silicon; thin film transistors; 0.12 to 7 micron; SRAM; Si; TFT; gate length; large-grain poly-Si; load devices; polycrystalline Si; polysilicon; static random-access memory; thin-film transistors; wafer process; Annealing; Circuits; Etching; Implants; Lithography; MOSFETs; Random access memory; Silicon; Stacking; Thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.258000
  • Filename
    258000
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1015344