Title :
Tenth-micron polysilicon thin-film transistors
Author :
Watts, R.K. ; Lee, J.T.C.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Small thin-film polysilicon transistors are of interest for load devices in static random-access memory (SRAM) cells of the near future. We present measured characteristics of thin-film transistors (TFT´s) with gate lengths ranging from 7 to 0.12 mu m made in large-grain polysilicon.<>
Keywords :
SRAM chips; elemental semiconductors; insulated gate field effect transistors; semiconductor technology; silicon; thin film transistors; 0.12 to 7 micron; SRAM; Si; TFT; gate length; large-grain poly-Si; load devices; polycrystalline Si; polysilicon; static random-access memory; thin-film transistors; wafer process; Annealing; Circuits; Etching; Implants; Lithography; MOSFETs; Random access memory; Silicon; Stacking; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
