High-mobility GeSi PMOS on SIMOX

Author

Nayak, D.K. ; Woo, J.C.S. ; Yabiku, G.K. ; MacWilliams, K.P. ; Park, J.S. ; Wang, K.L.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

14

Issue

11

fYear

1993

Firstpage

520

Lastpage

522

Abstract

A new p-channel GeSi-SIMOX device is presented. The device consists of a Si/Ge/sub 0.3/Si/sub 0.7//Si channel, which is grown pseudomorphically on a SIMOX substrate. Due to reduced vertical electric field and band bending at the surface of a GeSi-SIMOX device, hole confinement in the buried channel is improved over that of a GeSi-bulk device. Experimentally, the effective channel mobility of this device is found to be 90% higher than that of an identically processed conventional SIMOX device.<>

Keywords

Ge-Si alloys; SIMOX; carrier mobility; elemental semiconductors; insulated gate field effect transistors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; silicon; MBE growth; MOSFETs; SIMOX substrate; Si-Ge/sub 0.3/Si/sub 0.7/-Si; Si/Ge/sub 0.3/Si/sub 0.7//Si channel; band bending; effective channel mobility; hole confinement; p-channel GeSi-SIMOX device; pseudomorphic growth; vertical electric field; Carrier confinement; Doping; Fabrication; Germanium silicon alloys; MOSFET circuits; Molecular beam epitaxial growth; Scattering; Silicon germanium; Substrates; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.258002

Filename

258002