Title :
Improvement of the electrical properties of metal-SiO2-silicon capacitors by a preoxidation HF/ethanol clean of the substrate
Author :
Prom, J.L. ; Morfouli, P. ; Kassmi, K. ; Pananakakis, G. ; Sarrabayrouse, G.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
fDate :
6/1/1991 12:00:00 AM
Abstract :
The influence of a HF-ethanol dip as the last preoxidation cleaning step in the fabrication of metal-thin insulator-silicon capacitors is investigated. The experimental procedure and main advantages of this cleaning step for the electrical properties such as breakdown characteristics, I/V characteristics and interface state density are presented
Keywords :
capacitors; electric breakdown of solids; electronic density of states; elemental semiconductors; interface electron states; metal-insulator-semiconductor devices; silicon; silicon compounds; substrates; surface treatment; HF; I/V characteristics; MIS devices; Si-SiO2; breakdown characteristics; electrical properties; fabrication; interface state density; metal-SiO2-Si capacitors; preoxidation HF/ethanol clean; substrate cleaning;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
