Device simulation of submicrometer gate p+-i-p+ diamond transistors

Two-dimensional device simulation of submicrometer gate diamond p ⁺-i-p⁺ transistors with a SiO₂ gate insulator was investigated using the MEDICI device simulation program. A large modulation of the source-to-drain current was obtained in the accumulation mode. The computed diamond device characteristics were equivalent or better than the simulation results of 6H-SiC MESFET´s. It was concluded that the problems in diamond MESFET associated with the deep acceptor levels due to boron doping can be overcome in the p⁺ -i-p⁺ diamond FET´s because of the hole injection and the space charge limited current