Title :
Physically-based method for measuring the threshold voltage of MOSFETs
Author :
Yan, Z.X. ; Deen, M.J.
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Barnaby, BC, Canada
fDate :
6/1/1991 12:00:00 AM
Abstract :
A physically-based technique for measuring the threshold voltage of small geometry MOSFETs is presented. The new method, called the quasi-constant current (QCC) method, is based on the drain current equation in the subthreshold region. It defines the threshold voltage as the gate voltage required for surface band-bending of 2φF. Compared with some other commonly used methods, this technique has the advantages of better fitting accuracy in the subthreshold region, of extracting the threshold voltage, VTH, with a unique value based on a physical definition of the surface band-bending, and of being suitable for MOS devices over a wide range of voltage biases, device dimensions, and temperatures
Keywords :
insulated gate field effect transistors; semiconductor device testing; voltage measurement; MOS devices; MOSFETs; drain current equation; gate voltage; physically-based technique; quasi-constant current; small geometry devices; subthreshold region; surface band-bending; threshold voltage;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
