DocumentCode :
1015611
Title :
Thermal imaging of electronic devices with low surface emissivity
Author :
Webb, P.W.
Author_Institution :
Sch. of Electron. & Eng., Birmingham Univ., UK
Volume :
138
Issue :
3
fYear :
1991
fDate :
6/1/1991 12:00:00 AM
Firstpage :
390
Lastpage :
400
Abstract :
The technique of thermal imaging uses an infrared scanning imager to map the surface temperature of electronic devices and circuits. Often unrealistic thermal distributions are found in thermal images after emissivity correction, particularly where there are areas of low emissivity on the surface being studied. The background principles of temperature measurement are described using this technique and the reason these inconsistencies and errors may arise in measurements on devices having low surface emissivities is explained. A method of dealing with this problem is suggested and some results of measurements on a gallium arsenide MESFET with a very low surface emissivity are presented. These measurements give some guidance and warnings about the accuracy of this method for measuring thermal resistance
Keywords :
infrared imaging; integrated circuit testing; semiconductor device testing; temperature distribution; temperature measurement; thermal resistance measurement; GaAs; MESFET; circuits; electronic devices; errors; infrared scanning imager; low surface emissivity; surface temperature mapping; temperature measurement; thermal distributions; thermal imaging; thermal resistance;
fLanguage :
English
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
Publisher :
iet
ISSN :
0956-3768
Type :
jour
Filename :
258031
Link To Document :
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