• DocumentCode
    1015611
  • Title

    Thermal imaging of electronic devices with low surface emissivity

  • Author

    Webb, P.W.

  • Author_Institution
    Sch. of Electron. & Eng., Birmingham Univ., UK
  • Volume
    138
  • Issue
    3
  • fYear
    1991
  • fDate
    6/1/1991 12:00:00 AM
  • Firstpage
    390
  • Lastpage
    400
  • Abstract
    The technique of thermal imaging uses an infrared scanning imager to map the surface temperature of electronic devices and circuits. Often unrealistic thermal distributions are found in thermal images after emissivity correction, particularly where there are areas of low emissivity on the surface being studied. The background principles of temperature measurement are described using this technique and the reason these inconsistencies and errors may arise in measurements on devices having low surface emissivities is explained. A method of dealing with this problem is suggested and some results of measurements on a gallium arsenide MESFET with a very low surface emissivity are presented. These measurements give some guidance and warnings about the accuracy of this method for measuring thermal resistance
  • Keywords
    infrared imaging; integrated circuit testing; semiconductor device testing; temperature distribution; temperature measurement; thermal resistance measurement; GaAs; MESFET; circuits; electronic devices; errors; infrared scanning imager; low surface emissivity; surface temperature mapping; temperature measurement; thermal distributions; thermal imaging; thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings G
  • Publisher
    iet
  • ISSN
    0956-3768
  • Type

    jour

  • Filename
    258031