Edge gain suppression of a planar-type InGaAs-InP avalanche photodiodes with thin multiplication Layers for 10-gb/s applications

Author

Burm, J. ; Choi, J.Y. ; Cho, S.R. ; Kim, M.D. ; Yang, S.K. ; Baek, J.M. ; Rhee, D.Y. ; Jeon, B.O. ; Kang, H.Y. ; Jang, D.H.

Author_Institution

Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea

Volume

16

Issue

7

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

1721

Lastpage

1723

Abstract

Edge-breakdown free InP-InGaAs avalanche photodiodes (APDs) for 10-Gb/s operation were fabricated. Two-dimensional current profiles were measured to investigate the edge breakdown on double-stepped planar APDs. The edge breakdown prominent at high gain increased with the absorption layer thickness for a fixed multiplication thickness (0.25 μm). The edge breakdown was suppressed for 0.4-μm absorption layer at the gain of ten. A simple physical model was proposed to predict the results successfully. To suppress the edge breakdown, the multiplication layer thickness should be selected so that the breakdown voltage is minimum at the selected thickness.

Keywords

III-V semiconductors; avalanche breakdown; avalanche photodiodes; gallium arsenide; indium compounds; optical communication equipment; semiconductor device breakdown; 10 Gbit/s; InP-InGaAs; InP-InGaAs avalanche photodiodes; absorption layer; edge breakdown; edge gain suppression; photodiode fabrication; Absorption; Avalanche photodiodes; Current measurement; Doping; Electric breakdown; Indium phosphide; Optical fiber communication; Physics; Predictive models; Zinc;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.829546

Filename

1308277