• DocumentCode
    1015878
  • Title

    Early voltage in double heterojunction bipolar transistors

  • Author

    Jahan, M.M. ; Anwar, A.F.M.

  • Author_Institution
    Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA
  • Volume
    42
  • Issue
    11
  • fYear
    1995
  • fDate
    11/1/1995 12:00:00 AM
  • Firstpage
    2028
  • Lastpage
    2029
  • Abstract
    The Early voltage for abrupt double heterojunction bipolar transistors (DHBTs) has been calculated by using an effective junction velocity (Sc) at the base-collector heterojunction. Sc is obtained by self-consistently partitioning thermionic and quantum mechanical tunneling currents. Unlike single heterojunction bipolar transistors (SHBTs), the Early voltage varies very rapidly at low reverse bias and approaches the SHBT-limit at sufficiently high reverse bias. This is attributed to the presence of an energy barrier at the b-c heterojunction
  • Keywords
    heterojunction bipolar transistors; semiconductor device models; tunnelling; DHBT; Early voltage; abrupt double heterojunction; base-collector heterojunction; double heterojunction bipolar transistors; effective junction velocity; energy barrier; reverse bias; Dielectric constant; Double heterojunction bipolar transistors; Energy barrier; Heterojunction bipolar transistors; Linearity; Microwave devices; Quantum mechanics; Semiconductor devices; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.469414
  • Filename
    469414
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1015878