Title :
Epitaxial semiconductor devices
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
fDate :
3/1/1961 12:00:00 AM
Keywords :
Filling; Gain; Germanium; Guns; Hydrogen; Magnetic fields; Masers; Semiconductor devices; Semiconductor films; Semiconductor materials; Shape; Silicon; Solid state circuits; Substrates; Temperature;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1961.14733
