DocumentCode :
1016175
Title :
The vacuum evaporation of single crystal thin films of silicon
Author :
Hale, A.P. ; James, B.D.
Author_Institution :
Fairchild Semiconductor Corp., Mountain View, Calif.
Volume :
8
Issue :
2
fYear :
1961
fDate :
3/1/1961 12:00:00 AM
Firstpage :
175
Lastpage :
175
Keywords :
Epitaxial growth; Filling; Gain; Germanium; Guns; Hydrogen; Magnetic fields; Masers; Semiconductor films; Semiconductor thin films; Silicon; Solid state circuits; Substrates; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1961.14735
Filename :
1472898
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1016175
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