A mobility model for submicrometer MOSFET simulations including hot-carrier-induced device degradation

Author

Hiroki, Akira ; Odanaka, Shinji ; Ohe, Kikuyo ; Esaki, Hideya

Author_Institution

Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

Volume

35

Issue

9

fYear

1988

fDate

9/1/1988 12:00:00 AM

Firstpage

1487

Lastpage

1493

Abstract

The model presented includes the quantum effects of electrons in the inversion layer proposed by S.A. Schwarz and S.E. Russek (1983) and the surface scattering effects due to the interfacial charges. By comparison with experimental data from scaled MOSFETs, the limitation of K. Yamaguchi´s (1983) mobility model in submicrometer device simulations is implied, while the quantum channel broadening effects have been proven significant in turn. In addition, it is shown that the modeling of the screening effect of Coulomb scattering plays an important role in simulating the hot-carrier-induced MOSFET degradation. The model can predict the current-voltage characteristics within 5% accuracy for scaled MOSFETs down to 0.5-μm, as well as the degradation of electrical characteristics due to hot-carrier effects for submicrometer MOSFETs

Keywords

carrier mobility; hot carriers; insulated gate field effect transistors; semiconductor device models; surface scattering; 0.5 micron; Coulomb scattering; MOSFET simulations; current-voltage characteristics; electrical characteristics; hot-carrier-induced device degradation; interfacial charges; inversion layer electrons; mobility model; quantum channel broadening effects; scaled MOSFETs; screening effect; submicron device; surface scattering effects; Current-voltage characteristics; Degradation; Electric variables; Electrons; Hot carrier effects; Hot carriers; MOSFET circuits; Particle scattering; Predictive models; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2581

Filename

2581