Title :
Junctions in vapor-grown germanium
Author_Institution :
IBM Research Lab., Poughkeepsie, N. Y.
fDate :
3/1/1961 12:00:00 AM
Keywords :
Filling; Gain; Germanium; Guns; Hydrogen; L-band; Magnetic fields; Masers; Power generation; Radio frequency; Silicon; Solid state circuits; Temperature;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1961.14737
