DocumentCode

1016210

Title

Epitaxial growth of germanium and silicon single crystal films from the vapor phase

Author

Russell, G.

Author_Institution

Motorola, Inc., Phoenix, Ariz.

Volume

8

Issue

2

fYear

1961

fDate

3/1/1961 12:00:00 AM

Firstpage

175

Lastpage

175

Keywords

Bandwidth; Epitaxial growth; Filling; Germanium; Guns; Hydrogen; Magnetic fields; Masers; Semiconductor films; Silicon; Solid state circuits; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IRE Transactions on

Publisher

ieee

ISSN

0096-2430

Type

jour

DOI

10.1109/T-ED.1961.14739

Filename

1472902