An Analytical Compact Circuit Model for Nanowire FET

Author

Paul, Bipul C. ; Tu, Ryan ; Fujita, Shinobu ; Okajima, Masaki ; Lee, Thomas H. ; Nishi, Yoshio

Author_Institution

Stanford Univ., Stanford

Volume

54

Issue

7

fYear

2007

fDate

7/1/2007 12:00:00 AM

Firstpage

1637

Lastpage

1644

Abstract

In this paper, we propose a quasi-analytical device model of nanowire FET (NWFET) for both ballistic and drift-diffusion current transport, which can be used in any conventional circuit simulator like SPICE. The closed form expressions for current-voltage (I-V) and capacitance-voltage characteristics are obtained by analytically solving device equations with appropriate approximations. The developed model was further verified with the measured I-V characteristics of an NWFET device. Results show a close match of the model with measured data.

Keywords

ballistic transport; diffusion; field effect transistors; nanowires; semiconductor device models; analytical compact circuit model; ballistic transport; capacitance-voltage characteristic; current-voltage characteristic; drift-diffusion current transport; nanowire FET; quasi-analytical device model; Analytical models; Ballistic transport; Capacitance-voltage characteristics; Circuit analysis; Circuit simulation; Equations; FETs; MOSFETs; Nanoscale devices; SPICE; Ballistic transport; compact model; drift-diffusion transport; nanowire FET (NWFET);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.899397

Filename

4252380