Title :
Tunneling injection into modulation doping structures: a mechanism for negative differential resistance three-terminal high-speed devices
Author :
Leburton, Jean-Pierre ; Kolodzey, James
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
9/1/1988 12:00:00 AM
Abstract :
A tunneling injection mechanism into the channel of a modulation doping field effect transistor is discussed. In the presaturation regime of the drain current, the source current exhibits negative differential resistance as a result of the charge control by the gate field in the channel. The tunneling three-terminal device promises high-frequency operation
Keywords :
field effect transistors; negative resistance; negative resistance effects; semiconductor doping; solid-state microwave devices; tunnelling; TIFET; charge control; drain current; field effect transistor; gate field; high-frequency operation; microwave device; modulation doping structures; negative differential resistance; presaturation regime; source current; three-terminal high-speed devices; tunneling injection mechanism; tunnelling injection FET; Doping; Electrons; Epitaxial layers; FETs; Frequency; HEMTs; MODFETs; Resonant tunneling devices; Semiconductor diodes; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
