Thermal analysis of ESD-related hot spots [integrated circuits]

Author

Krieger, Gadi ; Einziger, Pinhas D.

Author_Institution

VLSI Technol. Inc., San Jose, CA, USA

Volume

35

Issue

9

fYear

1988

fDate

9/1/1988 12:00:00 AM

Firstpage

1553

Lastpage

1556

Abstract

The thermal response to a microscopic hot spot, formed by an exponential electrostatic discharge (ESD) pulse, is analyzed and discussed, using a spherically symmetric Gaussian distribution to model the hot spot. A nonsingular solution to the three-dimensional heat equation, applicable to input protection devices in integrated circuits, is obtained. The resulting near-field temperature distribution can be used to study failures related to local silicon melting

Keywords

discharges (electric); electrostatics; field effect integrated circuits; modelling; protection; temperature distribution; thermal analysis; CMOS; ESD pulse; ESD-related hot spots; MOS IC; exponential electrostatic discharge; failures; input protection devices; integrated circuits; local Si melting; microscopic hot spot; model; near-field temperature distribution; nonsingular solution; spherically symmetric Gaussian distribution; thermal response; three-dimensional heat equation; Electrostatic discharge; Feedback; Leakage current; Poisson equations; Protection; Resistance heating; Silicon; Temperature; Thermal conductivity; Thermal stresses;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2590

Filename

2590