Frequency and intensity modulation characteristics of GaAs lasers in an external cavity

Author

Carter, Gary M. ; Huang, Kao-Yang ; Brotman, Joel ; Grober, Robert ; Mandelberg, H.

Author_Institution

Dept. of Electr. Eng., Maryland Univ., Baltimore, MD, USA

Volume

29

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

2910

Lastpage

2918

Abstract

Frequency and intensity modulation characteristics were measured for external cavity GaAs diode lasers as a function of modulation frequency. The data, displayed as a chirp-to-power ratio (CPR), showed at low modulation frequencies a flat response and a 0° or 180° relative phase, depending on laser structure. A model incorporating a carrier-density-dependent imaginary part of the differential gain (Henry alpha factor) is developed to explain the data. The model yields simple scaling of the CPR with injection current and photon lifetime. The agreement between the model and data including scaling is excellent. These results provide strong evidence for transverse spatial hole burning in these lasers

Keywords

III-V semiconductors; carrier density; frequency modulation; gallium arsenide; laser cavity resonators; optical hole burning; optical modulation; semiconductor lasers; GaAs; GaAs lasers; Henry alpha factor; carrier-density-dependent imaginary part; chirp-to-power ratio; differential gain; diode lasers; external cavity; flat response; frequency modulation characteristics; injection current; intensity modulation characteristics; laser structure; modulation frequency; photon lifetime; relative phase; scaling; transverse spatial hole burning; Amplitude modulation; Charge carrier density; Chirp modulation; Diode lasers; Frequency modulation; Gallium arsenide; Intensity modulation; Laser modes; Quantum well lasers; Reflectivity;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.259405

Filename

259405