Title :
Pulsed dye amplification and frequency doubling of single longitudinal mode semiconductor lasers
Author :
Farkas, A.M. ; Eden, J.G.
Author_Institution :
Everitt Lab., Illinois Univ., Urbana, IL, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
A single-longitudinal-mode CW AlGaAs semiconductor laser (786 nm) has been pulse-amplified in a Nd:YAG-pumped dye system by 80 dB, yielding 4-ns (FWHM) infrared pulses having energies of 1.2 mJ. These amplified pulses have then been frequency-doubled in a KDP crystal to yield 110 μJ of tunable ultraviolet radiation at 393 nm. The amplified diode laser linewidth at 786 nm is measured to be 118 MHz
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; optical harmonic generation; optical materials; optical pumping; potassium compounds; semiconductor lasers; 1.2 mJ; 110 muJ; 118 MHz; 393 nm; 4 ns; 786 nm; AlGaAs; AlGaAs semiconductor laser; CW semiconductor laser; KDP; KDP crystal; KH2PO4; Nd:YAG-pumped dye system; YAG:Nd; YAl5O12:Nd; amplified diode laser linewidth; amplified pulses; frequency doubling; infrared pulses; pulsed dye amplification; semiconductor lasers; single longitudinal mode; tunable ultraviolet radiation; Diode lasers; Frequency; Laser modes; Laser tuning; Optical pulses; Oscillators; Pulse amplifiers; Pump lasers; Semiconductor diodes; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
