DocumentCode
1017007
Title
Design and characterization of In0.2Ga0.8As MQW vertical-cavity surface-emitting lasers
Author
Geels, R.S. ; Thibeault, B.J. ; Corzine, S.W. ; Scott, J.W. ; Coldren, L.A.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume
29
Issue
12
fYear
1993
fDate
12/1/1993 12:00:00 AM
Firstpage
2977
Lastpage
2987
Abstract
The device design, material characterization, and performance of optimized vertical-cavity surface-emitting lasers (VCSELs) are presented. The basic design goal was to increase the output power of the lasers without greatly increasing the low threshold current reported in earlier devices. The material characterization was performed by measuring in-plane lasers and broad-area VCSELs made from the same material as the small VCSELs. For 10-μm-square devices, outputs over 3 mW, device operation over 100°C, 6% wall-plug efficiency, threshold voltages under 3 V, and threshold currents under mA are reported
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; optical design techniques; semiconductor lasers; 100 C; 2 mA; 3 V; 3 mW; 6 percent; In0.2Ga0.8As; In0.2Ga0.8As MQW vertical-cavity surface-emitting lasers; broad-area VCSELs; design goal; device operation; in-plane lasers; laser design; low threshold current; material characterization; output power; threshold currents; threshold voltages; wall-plug efficiency; Design optimization; Optical design; Optical materials; Performance evaluation; Power generation; Power lasers; Surface emitting lasers; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.259415
Filename
259415
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