Title :
Storage time in diffused-base transistors
Author_Institution :
Bell Telephone Labs., Inc., Murray Hill, N. J.
Keywords :
Capacitance; Capacitors; Electrons; Equivalent circuits; Frequency; Material storage; P-i-n diodes; Silicon; Solid state circuits; Space charge; Strontium; Surface discharges; Surface impedance; Surface resistance; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1961.14832
