Title :
Effect of surface recombination and channel on diode and transistor characteristics
Author_Institution :
Fairchild Semiconductor Corp., Mountain View, Calif.
Keywords :
Cameras; Chemicals; Circuits; Electrodes; Electron emission; Gallium arsenide; Germanium; Ice; P-i-n diodes; Probability distribution; Protection; Pulse modulation; Radiative recombination; Semiconductor diodes; Silicon alloys; Surface treatment; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1961.14835
