Title :
Mapping semiconductor-device internal voltages as an aid to device design and for understanding device anomalies
Author_Institution :
IBM Corp., Poughkeepsie, N. Y.
Keywords :
Circuits; Current density; Data systems; Electron emission; Gallium arsenide; Germanium; Ice; P-i-n diodes; Probability distribution; Protection; Pulse modulation; Semiconductor diodes; Silicon; Surface treatment; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1961.14836
