Title :
GaAs heterojunction f.e.t. with epitaxial Ge gate
Author :
Anderson, W.T. ; Davey, J.E. ; Christou, Alex ; Bark, M.L. ; Sleger, K.J. ; Dietrich, H.B.
Author_Institution :
Naval Research Laboratory, Washington, USA
Abstract :
A Ge heterojunction-gate GaAs f.e.t. has been developed using p-type epitaxial Ge gates deposited by vacuum evaporation on heated n-type GaAs substrates. Boron-ion implantation of the gate and an aluminium overlay was used to lower the gate resistance. A typical 8 ¿m gate-length device exhibited a noise figure of 5.2 dB with 4.5 dB associated gain at 1.8 GHz.
Keywords :
junction gate field effect transistors; p-n heterojunctions; solid-state microwave devices; vapour phase epitaxial growth; 1.8 GHz operation; 4.5 dB gain; 5.2 dB noise figure; 8 micron gate length; Ge heterojunction gate GaAs FET; JFETs; characteristics; p-type epitaxial Ge gates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790008
