• DocumentCode
    1017218
  • Title

    GaAs heterojunction f.e.t. with epitaxial Ge gate

  • Author

    Anderson, W.T. ; Davey, J.E. ; Christou, Alex ; Bark, M.L. ; Sleger, K.J. ; Dietrich, H.B.

  • Author_Institution
    Naval Research Laboratory, Washington, USA
  • Volume
    15
  • Issue
    1
  • fYear
    1979
  • Firstpage
    11
  • Lastpage
    12
  • Abstract
    A Ge heterojunction-gate GaAs f.e.t. has been developed using p-type epitaxial Ge gates deposited by vacuum evaporation on heated n-type GaAs substrates. Boron-ion implantation of the gate and an aluminium overlay was used to lower the gate resistance. A typical 8 ¿m gate-length device exhibited a noise figure of 5.2 dB with 4.5 dB associated gain at 1.8 GHz.
  • Keywords
    junction gate field effect transistors; p-n heterojunctions; solid-state microwave devices; vapour phase epitaxial growth; 1.8 GHz operation; 4.5 dB gain; 5.2 dB noise figure; 8 micron gate length; Ge heterojunction gate GaAs FET; JFETs; characteristics; p-type epitaxial Ge gates;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790008
  • Filename
    4255971
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1017218