• DocumentCode
    1017240
  • Title

    High-power 11 GHz GaAs hi-lo Impatt diodes with titanium Schottky barriers

  • Author

    Grierson, J.R. ; Cooper, Ken ; Leigh, P.A. ; O´Sullivan, P.J. ; Huish, P.W.

  • Author_Institution
    Post Office Research Centre, Ipswich, UK
  • Volume
    15
  • Issue
    1
  • fYear
    1979
  • Firstpage
    13
  • Lastpage
    15
  • Abstract
    Schottky-barrier hi-lo GaAs Impatt diodes with Ti-Pt-Au contacts have been fabricated for the 10.7¿11.7 GHz band. At 180°C junction temperature rise the diodes have produced over 5 W of output power and up to 24% efficiency from an 11 GHz oscillator. Initial life tests show potential for high reliability.
  • Keywords
    IMPATT diodes; solid-state microwave devices; 5 W output power; GaAs hi-lo Impatt diodes; Schottky barrier GaAs Impatt diodes; Ti-Pt-Au contacts; high power 11 GHz Impatt diodes; life tests; reliability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790010
  • Filename
    4255973
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1017240