Title :
High-power 11 GHz GaAs hi-lo Impatt diodes with titanium Schottky barriers
Author :
Grierson, J.R. ; Cooper, Ken ; Leigh, P.A. ; O´Sullivan, P.J. ; Huish, P.W.
Author_Institution :
Post Office Research Centre, Ipswich, UK
Abstract :
Schottky-barrier hi-lo GaAs Impatt diodes with Ti-Pt-Au contacts have been fabricated for the 10.7¿11.7 GHz band. At 180°C junction temperature rise the diodes have produced over 5 W of output power and up to 24% efficiency from an 11 GHz oscillator. Initial life tests show potential for high reliability.
Keywords :
IMPATT diodes; solid-state microwave devices; 5 W output power; GaAs hi-lo Impatt diodes; Schottky barrier GaAs Impatt diodes; Ti-Pt-Au contacts; high power 11 GHz Impatt diodes; life tests; reliability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790010
