• DocumentCode
    1017259
  • Title

    Effect of ionising radiation on mobile-ion density in m.o.s. oxides

  • Author

    Bhar, T.N. ; Dat, R. ; Koyama, R.Y. ; Galloway, Kenneth F.

  • Author_Institution
    Howard University, Department of Electrical Engineering, Washington, USA
  • Volume
    15
  • Issue
    1
  • fYear
    1979
  • Firstpage
    16
  • Lastpage
    17
  • Abstract
    Data are presented that indicate that the density of mobile ions in m.o.s. oxides is unaffected by exposure to ionising radiation. The flat-band voltages following irradiation and anneal appear to be correlated with the density of mobile ions.
  • Keywords
    metal-insulator-semiconductor structures; radiation effects; radiation hardening (electronics); MOS oxides; MOS structures; flat band voltages; ionising radiation; mobile ion density; radiation effects;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790012
  • Filename
    4255975
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1017259