Title :
Discharge mechanisms in floating-gate e.p.r.o.m. cells
Author_Institution :
Post Office Research Centre, Ipswich, UK
Abstract :
Measurements of charge loss from floating-gate e.p.r.o.m. cells have been made at low temperatures by applying terminal voltages to accelerate the discharge. The results strongly suggest that the operative mechanism is electronic tunnelling, implying that it is not possible to make a simple Arrhenius extrapolation from high-temperature storage experiments to service conditions.
Keywords :
field effect integrated circuits; integrated memory circuits; read-only storage; discharge mechanisms; electronic tunnelling; floating gate EPROM cells; low temperature discharge rate measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790015
