Title :
Fabrication and characterization of 11-kV normally off 4H-SiC trenched-and-implanted vertical junction FET
Author :
Zhao, J.H. ; Alexandrov, P. ; Jianhui Zhang ; Xueqing Li
Author_Institution :
Electron. & Comput. Eng. Dept., Rutgers Univ., Piscataway, NJ, USA
fDate :
7/1/2004 12:00:00 AM
Abstract :
This letter reports the first demonstration of 101 kV trenched-and-implanted normally off 4H-SiC vertical junction field-effect transistor (TI-VJFET) with a 120 μm /spl sim/4.9×10/sup 14/ cm/sup -3/-doped drift layer. Blocking voltages (V/sub B/) of 10 kV to 11 kV have been measured. The best specific on-resistance (R/sub SP/_/sub ON/) normalized to source active area has been determined to be 130 m/spl Omega//spl middot/cm2. Three-dimensional computer modeling including current spreading effect shows that the TI-VJFET would have a specific resistance of 168 m/spl Omega//spl middot/cm2 if it is scaled up substantially in size.
Keywords :
junction gate field effect transistors; power field effect transistors; semiconductor device models; silicon; wide band gap semiconductors; 101 kV; 3D computer modeling; SiC; blocking voltages; current spreading effect; normally-off junction field effect transistor; specific on-resistance; specific resistance; trenched-and-implanted vertical junction FET; FETs; Fabrication; JFETs; MOSFETs; Plasma applications; Plasma devices; Plasma sources; Silicon carbide; Temperature; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.830265
