DocumentCode
1017331
Title
Slip patterns and dislocation models of heavily doped silicon surfaces
Author
Shockley, W. ; Queisser, H.J.
Author_Institution
Shockley Transistor, Palo Alto, Calif.
Volume
8
Issue
5
fYear
1961
Firstpage
428
Lastpage
429
Keywords
Boron; Capacitive sensors; Charge carrier processes; Degradation; Equations; Gallium arsenide; Gold; Ionization; Radiative recombination; Semiconductor diodes; Semiconductor impurities; Semiconductor process modeling; Silicon; Solid modeling; Stress; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IRE Transactions on
Publisher
ieee
ISSN
0096-2430
Type
jour
DOI
10.1109/T-ED.1961.14850
Filename
1473013
Link To Document