Title :
Slip patterns and dislocation models of heavily doped silicon surfaces
Author :
Shockley, W. ; Queisser, H.J.
Author_Institution :
Shockley Transistor, Palo Alto, Calif.
Keywords :
Boron; Capacitive sensors; Charge carrier processes; Degradation; Equations; Gallium arsenide; Gold; Ionization; Radiative recombination; Semiconductor diodes; Semiconductor impurities; Semiconductor process modeling; Silicon; Solid modeling; Stress; Temperature;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1961.14850
