Title :
Mobility, transit time and transconductance in submicrometre-gate-length m.e.s.f.e.t.s
Author :
Frey, Jeffrey ; Wada, Tomotaka
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Abstract :
Two-dimensional simulations of submicrometre-gate-length m.e.s.f.e.t.s of Si, GaAs and InP show that device transit time and transconductance depend more on high-field diffusion constant and the shape of the velocity/field characteristic than on low-field mobility. Reasonable InP devices have shorter transit times and higher transconductances than GaAs devices, and for certain device parameters these figures of merit can be almost the same for Si and GaAs devices.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; digital simulation; electronic engineering computing; elemental semiconductors; gallium arsenide; indium compounds; semiconductor device models; silicon; solid-state microwave devices; GaAs; InP; Si; carrier mobility; sub micron gate length MESFETs; transconductance; transit time; two dimensional simulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790020
