Title :
Gain expansion and intermodulation in a m.e.s.f.e.t. amplifier
Author :
Blanco, Cristian
Author_Institution :
ETSI de Telecomunicacion, Laboratorio de Microondas, Madrid, Spain
Abstract :
A simple way of biasing and tuning an X-band m.e.s.f.e.t. for gain expansion is presented. The measured gain and phase of an experimental amplifier make possible a prediction of the third-order intermodulation using a simple power series. The calculated and measured intermodulation are in agreement with each other.
Keywords :
Schottky gate field effect transistors; intermodulation; microwave amplifiers; solid-state microwave circuits; tuning; MESFET amplifiers; X-band; biasing; gain expansion; intermodulation; microwave amplifiers; tuning;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790023
