• DocumentCode
    1017539
  • Title

    Changes in the thermal oxidation of gallium arsenide induced by ion implantation

  • Author

    Butcher, D.N. ; Sealy, B.J.

  • Author_Institution
    University of Surrey, Department of Electronic and Electrical Engineering, Guildford, UK
  • Volume
    15
  • Issue
    2
  • fYear
    1979
  • Firstpage
    51
  • Lastpage
    52
  • Abstract
    The effect of ion implantation on the growth of oxides formed on gallium arsenide in oxygen at 510°C for 2¿ h has been studied. Thirteen ion species were implanted at doses of 1×1015 ions cm¿2. Potassium, nitrogen and fluorine produced significant increases in oxidation, whereas calcium, aluminium and nickel had the opposite effect.
  • Keywords
    III-V semiconductors; gallium arsenide; ion implantation; nitrogen; oxidation; potassium; GaAs; ion implantation effects; thermal oxidation rate changes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790036
  • Filename
    4256000
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1017539