DocumentCode
1017616
Title
Nonlinearity of d.h. GaAlAs lasers
Author
Stubkjr, Kristian Elmholdt
Author_Institution
Technical University of Denmark, Electromagnetics Institute, Lyngby, Denmark
Volume
15
Issue
2
fYear
1979
Firstpage
61
Lastpage
62
Abstract
Experimental investigation of the relative second- and third-harmonic distortion in d.h. semiconductor lasers is presented. The results are compared to the harmonic distortion predicted from simple rate equations. It is suggested that nearfield instabilities limit the minimum distortion level.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; optical harmonic generation; semiconductor junction lasers; DH GaAlAs lasers; harmonic distortion; nearfield instabilities; nonlinearity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790044
Filename
4256008
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