Performance of modulation-doped charge-coupled devices (MD-CCD´s) in the microwave and millimeter-wave bands

Author

La Rue, Ross A. ; Colbeth, Richard E. ; Davis, Gary A. ; Yuen, Cindy ; Webb, Chris ; Shih, Catherine ; Weiss, Robert E.

Author_Institution

EO Sensors Div., INTEVAC, Palo Alto, CA, USA

Volume

41

Issue

1

fYear

1994

fDate

1/1/1994 12:00:00 AM

Firstpage

10

Lastpage

18

Abstract

A two-phase, modulation-doped charge coupled device (MD-CCD) has been characterized by both phase shift and charge transfer efficiency (CTE) measurements from 1.25 MHz to 16.4 GHz. Both two-dimensional transient simulations and experimental evidence support the conclusion that the cutoff frequency for transport of discrete charge packets emulates the cutoff frequency of small signal HEMT devices in the short gate length regime. These simulations predict a CTE of almost 0.999 at 40 GHz for an In_0.53Ga_0.47As channel device. The device is fabricated using conventional MMIC processing techniques. In addition, measurement methods used for characterization of a prototype 5-stage delay line chip agree well with simulations using a new CCD SPICE model

Keywords

MMIC; SPICE; charge-coupled device circuits; charge-coupled devices; delay lines; digital simulation; microwave integrated circuits; solid-state microwave devices; transient response; 1.25 MHz to 40 GHz; 5-stage delay line chip; CCD SPICE model; In_0.53Ga_0.47As; In_0.53Ga_0.47As channel device; MMIC processing techniques; charge transfer efficiency; charge-coupled devices; cutoff frequency; microwave bands; millimeter-wave bands; modulation-doped CCD; phase shift; two-dimensional transient simulations; two-phase operation; Charge measurement; Charge transfer; Charge-coupled image sensors; Current measurement; Cutoff frequency; Epitaxial layers; HEMTs; MMICs; Phase measurement; Predictive models;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.259614

Filename

259614